604DCR Datasheet, PDF (2/2 Pages) Naina Semiconductor ltd. – Phase Control Thyristors (Capsule Type)

Naina Semiconductor Ltd.
604DCR
Blocking Parameters (TJ = 25⁰C, unless otherwise specified)
Parameters
Critical rate of rise of off-state voltage @ T_J = T_J max, linear to 80% rated
V_DRM
Maxmimum peak reverse & off-state leakage current @ T_J = T_J max, rated
V_DRM/V_RRM applied
Symbol
dV/dt
I_RRM, I_DRM
Values
500
40
Triggering Parameters (TJ = 25⁰C, unless otherwise specified)
Parameters
DC gate current to trigger
DC gate voltage to trigger
Symbol
I_GT
V_GT
Values
200
3.0
Thermal and Mechanical Specifications (TJ = 25⁰C, unless otherwise specified)
Parameters
Symbol
Maximum operating junction temperature range
T_J
Maximum storage temperature range
T_Stg
Maximum thermal resistance, junction to case
Mounting torque
R_th(JC)
F
Approximate weight
W_T
Values
- 40 to +125
- 40 to +125
0.06
9 … 11
90
Units
V/µs
mA
Units
mA
V
Units
0_C
0_C
0_C/W
kN
g
ALL DIMENSIONS IN MM
2
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