SD51_13 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Schottky Rectifier Diode, 60A

Naina Semiconductor Ltd.
Features
• Fast Switching
• Low forward voltage drop
• Guard ring protection
• High surge capacity
• High efficiency, low power loss
Schottky Rectifier Diode, 60A
SD51 thru
SD51R
Electrical Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Symbol Values Units
Repetitive peak reverse voltage
DC blocking voltage
V_RRM
45
V
V_DC
Average rectified forward current (T_C ≤ 100^oC)
I_F(AV)
60
A
Non-repetitive peak surge current, half sine wave (T_C =
25 ^oC)
I_FSM
800
A
DO-203AB (DO-5)
Maximum Ratings (T_C = 25^oC, unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at rated DC voltage
Test Conditions
I_F = 60 A
T_C = 25^oC
V_R = 45V, T_C = 25^oC
V_R = 45V, T_C = 125^oC
Symbol
V_F
I_R
SD51(R)
0.66
5
200
Units
V
mA
Thermal & Mechanical Specifications (T_E = 25^oC, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to case
R_th(JC)
Operating junction temperature range
T_J
Storage temperature
T_stg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
SD51(R)
1.0
-65 to 150
-65 to 175
4.0
17.0
Units
o_C/W
o_C
o_C
Nm
g
1
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