NTT162H Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Thyristor-Thyristor Module, 143 Amps

Naina Semiconductor Ltd.
NTT162 H
Features
Thyristor-Thyristor Module, 143 Amps
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
Voltage Ratings (TA = 25^oC, unless otherwise noted)
Type
number
Voltage
Code
VRRM, Maximum
repetitive peak
reverse voltage
VRSM, Maximum non-
repetitive peak
reverse voltage
200
NTT162 H
220
(V)
2000
2200
(V)
2100
2300
VDRM, Maximum
repetitive peak off-
state voltage
(V)
2000
2200
IRRM, Maximum
reverse leakage
current @ TJMAX
(mA)
max. 30
Electrical Characteristics (TA = 25⁰C unless otherwise noted)
Parameter
Symbol
Maximum average forward current @ TJ = 85⁰C
IT(AV)
Maximum average RMS forward current
IT(RMS)
Maximum non-repetitive surge current
ITSM
Maximum I²t for fusing
I²t
Forward voltage drop
VTM
Critical rate of rise of on-state current
di/dt
Critical rate of rise of off-state voltage
dv/dt
Gate current required to trigger
IGT
Gate voltage required to trigger
VGT
Maximum holding current
IH
Maximum latching current
IL
Isolation voltage
VISO
Values
143
225
5200
135200
max. 1.6
max. 200
max. 1000
min. 150
min. 2
150
300
4000
Thermal & Mechanical Specifications (TA = 25⁰C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Storage temperature
Thermal resistance, junction to case
TJ
Tstg
Rth(JC)
to heatsink
Mounting torque
F
to terminals
Weight
W
Values
-40 to +125
-40 to +125
0.16
5 ± 15%
5 ± 15%
220
Units
A
A
A
A²s
V
A/µs
V/µs
mA
V
mA
mA
V
Units
0_C
0_C
0_C/W
Nm
g
1
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