NTD250 Datasheet, PDF (1/3 Pages) Naina Semiconductor ltd. – Thyristor-Diode Module, 250 Amps

Naina Semiconductor Ltd.
NTD250
Features
Thyristor-Diode Module, 250 Amps
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
Voltage Ratings (TA = 25^oC, unless otherwise noted)
Type
number
Voltage
Code
VRRM, Maximum
repetitive peak
reverse voltage
VRSM, Maximum non-
repetitive peak reverse
voltage
60
80
100
NTD250
120
140
160
180
(V)
600
800
1000
1200
1400
1600
1800
(V)
700
900
1100
1300
1500
1700
1900
VDRM, Maximum
repetitive peak off-
state voltage
(V)
600
800
1000
1200
1400
1600
1800
IRRM, Maximum
reverse leakage
current @ TJMAX
(mA)
max. 80
Electrical Characteristics (TA = 25⁰C unless otherwise noted)
Parameter
Symbol
Maximum average forward current @ TJ = 85⁰C
IT(AV)
Maximum average RMS forward current
IT(RMS)
Maximum non-repetitive surge current
ITSM
Maximum I²t for fusing
I²t
Forward voltage drop
VTM
Critical rate of rise of on-state current
di/dt
Critical rate of rise of off-state voltage
dv/dt
Gate current required to trigger
IGT
Gate voltage required to trigger
VGT
Maximum holding current
IH
Maximum latching current
IL
Isolation voltage
VISO
Values
250
390
9000
405000
max. 1.4
max. 250
max. 1000
min. 200
min. 3
150
300
3000
Units
A
A
A
A²s
V
A/µs
V/µs
mA
V
mA
mA
V
Thermal & Mechanical Specifications (TA = 25⁰C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
TJ
Storage temperature
Thermal resistance, junction to case
Tstg
Rth(JC)
to heatsink
Mounting torque
F
to terminals
Weight
W
Values
-40 to +130
-40 to +130
0.14
5 ± 15%
8 ± 15%
620
Units
0_C
0_C
0_C/W
Nm
g
1
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