NP5002R Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Press Fit Diode, 50A

Naina Semiconductor Ltd.
Features
• Low Leakage
• Low Forward Voltage Drop
• Low Cost
• High Surge Current Capability
Mechanical Characteristics
• Chip: Gpp Chip
• Encapsulation: Epoxy Sealed
• Lead: Plated Lead, Solderable
• Mounting: Press Fit
• Weight: 6.5 grams (approx.)
Press Fit Diode, 50A
NP5002(R) thru
NP5006(R)
PRESS-FIT DIODE
Electrical Characteristics (T_A = 25⁰C unless otherwise specified)
Parameter
Symbol NP5002(R)
Maximum repetitive peak reverse
voltage
V_RRM
200
Maximum RMS Voltage
V_RMS
140
Maximum DC Blocking Voltage
V_DC
200
Maximum average forward output
current @ T_A = 105⁰C
I_F(AV)
Peak forward surge current (8.3ms)
single half sine-wave superimposed
I_FSM
on rated load
Maximum instantaneous forward
voltage drop @ 100 A
Maximum DC reverse
current at rated DC
blocking voltage
T_A = 25⁰C
T_A = 100⁰C
Typical Thermal Resistance
Operating and storage temperature
V_F
I_R
R_θ(j-c)
T_J, T_STG
NP5004(R)
400
280
400
50
600
1.1
5.0
450
0.8
-65 to +175
NP5006(R)
600
420
600
Units
V
V
V
A
A
V
µA
o_C/W
o_C
1
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[e-mail] • www.nainasemi.com