N3T100 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Non-isolated Thyristor Module, 100 Amps

Naina Semiconductor Ltd.
N3T100
Non-isolated Thyristor Module, 100 Amps
Features
• Low voltage three-phase
• High surge current capability
• Easy construction
• Non-isolated
• Mounting base as common anode
Voltage Ratings (TC = 25^OC unless otherwise specified)
Parameter
Symbol N3T100A30 N3T100A40
Maximum repetitive peak
reverse voltage
VRRM
300
400
Maximum non-repetitive
peak reverse voltage
VRSM
360
480
Maximum repetitive peak
off-state voltage
VDRM
300
400
Units
V
V
V
Electrical Characteristics (TC = 25^OC unless otherwise specified)
Parameter
Conditions
Average on-state current
R.M.S. on-state current
Single phase, half-wave, 180⁰
conduction
On-state surge current
half cycle, 50Hz, peak value, non-
repetitive
I²t required for fusing
Peak gate current
Peak gate voltage (forward)
Peak gate voltage (reverse)
Critical rate of rise of on-state
current
IG = 200mA, TJ=25⁰C
Critical rate of rise of off-state
voltage
Holding current
Peak on-state voltage
Repetitive Peak Reverse Current
Gate Trigger Current
Gate Trigger Voltage
TJ = 150⁰C
TJ = 25⁰C
TJ = 25⁰C
TJ = 150⁰C, single phase, half wave
TJ = 25^OC, IT = 1A
TJ = 25^OC, IT = 1A
Symbol
IT(AV)
IT(RMS)
ITSM
I²t
IGM
VFGM
VRGM
di/dt
dv/dt
IH
VTM
IRRM
IGT
VGT
Values
100
157
3500
61250
3
10
5
50
50
70
1.20
15
150
2
Thermal & Mechanical Specifications (TC = 25^OC unless otherwise specified)
Parameter
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
Weight
Symbol
TJ
TSTG
Rth(JC)
W
Values
-40 to +150
-40 to +125
0.30
180
Units
A
A
A
A²S
A
V
V
A/µs
V/µs
mA
V
mA
mA
V
Units
0_C
0_C
0_C/W
g
1
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