MUR30005CT Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Super Fast Recovery Diode, 300A

Naina Semiconductor Ltd.
MUR30005CT thru
MUR30020CTR
Features
Super Fast Recovery Diode, 300A
• Dual Diode Construction
• Low Leakage Current
• Low forward voltage drop
• High surge current capability
• Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
Repetitive peak reverse
voltage
V_RRM
50
RMS reverse voltage
V_RMS
35
DC blocking voltage
Average forward current
Non-repetitive forward surge
current, half sine-wave
V_DC
I_F(AV)
I_FSM
T_C ≤ 140 ^oC
T_C = 25 ^oC
50
300
1500
MUR30010CT(R)
100
70
100
300
1500
MUR30020CT(R)
200
140
200
300
1500
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
DC forward voltage
V_F
I_F = 50 A
T_J = 25 ^oC
1.3
DC reverse current
V_R = 50 V
I_R
T_J = 25 ^oC
V_R = 50 V
T_J = 125^oC
25
1
Maximum Reverse Recovery
Time
I_F = 0.5A
t_rr
I_R = 1.0A
I_RR = 0.25A
90
MUR30010CT(R)
1.3
25
1
90
MUR30020CT(R)
1.3
25
1
90
Units
V
µA
mA
nS
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
MUR30005CT(R)
Thermal resistance
junction to case
R_thJ-C
1.0
Operating, storage
temperature range
T_J , T_stg
- 40 to +175
MUR30010CT(R)
1.0
- 40 to +175
MUR30020CT(R)
1.0
- 40 to +175
Units
o_C/W
o_C
1
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