MUR20040CT Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Super Fast Recovery Diode, 200A

Naina Semiconductor Ltd.
MUR20040CT thru
MUR20060CTR
Features
Super Fast Recovery Diode, 200A
• Dual Diode Construction
• Low Leakage Current
• Low forward voltage drop
• High surge current capability
• Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
V_RRM
RMS reverse voltage
V_RMS
DC blocking voltage
V_DC
Average forward current
I_F(AV)
Non-repetitive forward surge current, half sine-
wave
I_FSM
Conditions
T_C ≤ 140 ^oC
T_C = 25 ^oC
MUR20040CT(R)
400
280
400
200
800
MUR20060CT(R)
600
420
600
200
800
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol Conditions
DC forward voltage
V_F
I_F = 50 A
T_J = 25 ^oC
DC reverse current
V_R = 50 V
I_R
T_J = 25 ^oC
V_R = 50 V
T_J = 125^oC
Maximum Reverse Recovery Time
I_F = 0.5A
t_rr
I_R = 1.0A
I_RR = 0.25A
MUR20040CT(R)
1.3
25
1
90
MUR20060CT(R)
1.7
25
1
110
Units
V
µA
mA
nS
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Thermal resistance
junction to case
R_thJ-C
Operating, storage temperature range
T_J , T_stg
MUR20040CT(R) MUR20060CT(R) Units
1.0
1.0
o_C/W
- 40 to +175
- 40 to +175
o_C
1
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