|
MBR8045 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Schottky Power Diode, 80A | |||
|
Naina Semiconductor Ltd.
MBR8045 thru
MBR80100R
Features
⢠Fast Switching
⢠Low forward voltage drop
⢠High surge capability
⢠High efficiency, low power loss
⢠Normal and Reverse polarity
Schottky Power Diode, 80A
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
MBR8045(R) MBR8060(R) MBR8080(R)
MBR80100(R)
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
57
70
V
DC blocking voltage
VDC
45
60
80
100
V
Continuous forward current
TC ⤠120oC
IF
80
80
80
80
A
Surge non-repetitive forward
current, half-sine wave
TC = 25oC
IFSM
1000
1000
1000
1000
A
Forward voltage
Reverse current
IF = 80 A
TJ = 25oC
VF
0.65
0.75
0.84
VR = 20V,
TJ = 25oC
VR = 20V,
IR
TJ = 125oC
5
250
5
250
5
250
0.84
V
5
mA
250
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol MBR8045(R) MBR8060(R) MBR8080(R)
Maximum thermal resistance, junction to
case
Rth(JC)
1.0
Operating junction temperature range
TJ
Storage temperature
Tstg
-65 to 150
-65 to 175
Mounting torque (non-lubricated threads)
F
4.0
Approximate allowable weight
W
17.0
MBR80100(R)
Unit
oC/W
oC
oC
Nm
g
1
D-95, Sector 63, Noida â 201301, India ⢠Tel: 0120-4205450 ⢠Fax: 0120-4273653
sales@nainasemi.com ⢠www.nainasemi.com
|
▷ |