MBR8020 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – SCHOTTKY DIODES STUD TYPE 80 A

Naina Semiconductor Ltd.
MBR8020 thru
MBR8040R
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 80A
DO-203AB (DO-5)
Maximum Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
Repetitive peak reverse voltage
V_RRM
RMS reverse voltage
V_RMS
DC blocking voltage
Continuous forward current
V_DC
T_C ≤ 120^oC
I_F
Surge non-repetitive forward
current, half-sine wave
T_C = 25^oC
I_FSM
Forward voltage
Reverse current
I_F = 80 A
T_J = 25^oC
V_F
V_R = 20V,
T_J = 25^oC
V_R = 20V,
I_R
T_J = 125^oC
MBR8020(R)
20
14
20
80
1000
0.65
5
250
MBR8030(R)
30
21
30
80
1000
0.65
5
250
MBR8035(R)
35
25
35
80
1000
0.65
5
250
MBR8040(R)
40
28
40
80
1000
0.65
5
250
Units
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Symbol MBR8020(R) MBR8030(R) MBR8035(R)
Maximum thermal resistance, junction to
case
R_th(JC)
1.0
Operating junction temperature range
T_J
Storage temperature
T_stg
-65 to 150
-65 to 175
Mounting torque (non-lubricated threads)
F
4.0
Approximate allowable weight
W
17.0
MBR8040(R)
Units
o_C/W
o_C
o_C
Nm
g
1
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