MBR6045 Datasheet, PDF (1/2 Pages) Gunter Seniconductor GmbH. – Chips for Schottky Diodes

Naina Semiconductor Ltd.
MBR6045 thru
MBR60100R
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 60A
DO-203AB (DO-5)
Maximum Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
MBR6045(R) MBR6060(R) MBR6080(R)
MBR60100(R)
Unit
Repetitive peak reverse voltage
V_RRM
45
60
80
100
V
RMS reverse voltage
V_RMS
32
42
57
70
V
DC blocking voltage
V_DC
45
60
80
100
V
Continuous forward current
T_C ≤ 100^oC
I_F
60
60
60
60
A
Surge non-repetitive forward
current, half-sine wave
T_C = 25^oC
I_FSM
700
700
700
700
A
Forward voltage
Reverse current
I_F = 60 A
T_J = 25^oC
V_F
0.65
0.75
0.84
V_R = 20V,
T_J = 25^oC
V_R = 20V,
I_R
T_J = 125^oC
5
150
5
150
5
150
0.84
V
5
mA
150
Thermal & Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Symbol MBR6045(R) MBR6060(R) MBR6080(R)
Maximum thermal resistance, junction to
case
R_th(JC)
1.0
Operating junction temperature range
T_J
Storage temperature
T_stg
-65 to 150
-65 to 175
Mounting torque (non-lubricated threads)
F
4.0
Approximate allowable weight
W
17.0
MBR60100(R)
Unit
o_C/W
o_C
o_C
Nm
g
1
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