MBR40045CT Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Surge Capability

Naina Semiconductor Ltd.
MBR40045CT thru
MBR400100CTR
Features
Silicon Schottky Diode, 400A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V V_RRM
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40045CT
(R)
Repetitive peak
reverse voltage
V_RRM
45
RMS reverse voltage V_RMS
32
DC blocking voltage V_DC
45
Average forward
current
I_F(AV)
T_C ≤ 125 ^oC
400
Non-repetitive
forward surge
current, half sine-
wave
I_FSM
T_C = 25 ^oC
t_p = 8.3 ms
3000
MBR40060CT
(R)
60
42
60
400
3000
MBR40080CT
(R)
80
56
80
400
3000
MBR400100C
T(R)
100
70
100
400
3000
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40045CT
(R)
DC forward voltage
V_F
I_F = 200 A
T_J = 25 ^oC
0.68
V_R = 20 V
DC reverse current
I_R
T_J = 25 ^oC
V_R = 20 V
T_J = 125^oC
5
200
MBR40060CT
(R)
0.68
5
200
MBR40080CT
(R)
0.68
5
200
MBR400100C
T(R)
0.68
5
200
Units
V
mA
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
MBR40045CT
(R)
Thermal resistance
junction to case
R_thJ-C
0.35
Operating, storage
temperature range
T_J , T_stg
- 40 to +175
MBR40060CT
(R)
0.35
- 40 to +175
MBR40080CT
(R)
0.35
- 40 to +175
MBR400100C
T(R)
0.35
- 40 to +175
Units
o_C/W
o_C
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com