MBR3545 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Schottky Power Diode, 35A

Naina Semiconductor Ltd.
MBR3545 thru
MBR35100R
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 35A
DO-203AA (DO-4)
Maximum Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
MBR3545(R) MBR3560(R) MBR3580(R)
MBR35100(R)
Unit
Repetitive peak reverse voltage
V_RRM
45
60
80
100
V
RMS reverse voltage
V_RMS
32
42
57
70
V
DC blocking voltage
V_DC
45
60
80
100
V
Continuous forward current
T_C ≤ 110^oC
I_F
35
35
35
35
A
Surge non-repetitive forward
current, half-sine wave
T_C = 25^oC
I_FSM
600
600
600
600
A
Forward voltage
Reverse current
I_F = 35 A
T_J = 25^oC
V_F
0.68
0.75
0.84
V_R = 20V,
T_J = 25^oC
V_R = 20V,
I_R
T_J = 125^oC
1.5
25
1.5
25
1.5
25
0.84
V
1.5
mA
25
Thermal & Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Maximum thermal resistance, junction to
case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
R_th(JC)
1.5
o_C/
W
T_J
-55 to 150
o_C
T_stg
-55 to 175
o_C
F
2.0
Nm
Approximate allowable weight
W
5.0
g
1
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