MBR30045CT Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Silicon Schottky Diode, 300A

Naina Semiconductor Ltd.
MBR30045CT thru
MBR300100CTR
Features
Silicon Schottky Diode, 300A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V V_RRM
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30045CT
(R)
Repetitive peak
reverse voltage
V_RRM
45
RMS reverse voltage V_RMS
32
DC blocking voltage V_DC
45
Average forward
current
I_F(AV)
T_C ≤ 140 ^oC
300
Non-repetitive
forward surge
current, half sine-
wave
I_FSM
T_C = 25 ^oC
t_p = 8.3 ms
2500
MBR30060CT
(R)
60
42
60
300
2500
MBR30080CT
(R)
80
56
80
300
2500
MBR300100C
T(R)
100
70
100
300
2500
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30045CT
(R)
DC forward voltage
V_F
I_F = 150 A
T_J = 25 ^oC
0.68
V_R = 20 V
DC reverse current
I_R
T_J = 25 ^oC
V_R = 20 V
T_J = 125^oC
8
200
MBR30060CT
(R)
0.76
8
200
MBR30080CT
(R)
0.88
8
200
MBR300100C
T(R)
0.88
8
200
Units
V
mA
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
MBR30045CT
(R)
Thermal resistance
junction to case
R_thJ-C
0.4
Operating, storage
temperature range
T_J , T_stg
- 40 to +175
MBR30060CT
(R)
0.4
- 40 to +175
MBR30080CT
(R)
0.4
- 40 to +175
MBR300100C
T(R)
0.4
- 40 to +175
Units
o_C/W
o_C
1
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