MBR30020CT Datasheet, PDF (1/2 Pages) Micro Commercial Components – 300 Amp Rectifier 20 to 100 Volts Schottky Barrier

Naina Semiconductor Ltd.
MBR30020CT thru
MBR30040CTR
Features
Silicon Schottky Diode, 300A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V V_RRM
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30020CT
(R)
Repetitive peak
reverse voltage
V_RRM
20
RMS reverse voltage V_RMS
14
DC blocking voltage V_DC
20
Average forward
current
I_F(AV)
T_C ≤ 140 ^oC
300
Non-repetitive
forward surge
current, half sine-
wave
I_FSM
T_C = 25 ^oC
t_p = 8.3 ms
2500
MBR30030CT
(R)
30
21
30
300
2500
MBR30035CT
(R)
35
25
35
300
2500
MBR30040CT
(R)
40
28
40
300
2500
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30020CT
(R)
DC forward voltage
V_F
I_F = 150 A
T_J = 25 ^oC
0.68
V_R = 20 V
DC reverse current
I_R
T_J = 25 ^oC
V_R = 20 V
T_J = 125^oC
8
200
MBR30030CT
(R)
0.68
8
200
MBR30035CT
(R)
0.68
8
200
MBR30040CT
(R)
0.68
8
200
Units
V
mA
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
MBR30020CT
(R)
Thermal resistance
junction to case
R_thJ-C
0.4
Operating, storage
temperature range
T_J , T_stg
- 40 to +175
MBR30030CT
(R)
0.4
- 40 to +175
MBR30035CT
(R)
0.4
- 40 to +175
MBR30040CT
(R)
0.4
- 40 to +175
Units
o_C/W
o_C
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com