MBR20045CT Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Silicon Schottky Diode, 200A

Naina Semiconductor Ltd.
MBR20045CT thru
MBR200100CTR
Features
Silicon Schottky Diode, 200A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V V_RRM
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20045CT
(R)
Repetitive peak
reverse voltage
V_RRM
45
RMS reverse voltage V_RMS
32
DC blocking voltage V_DC
45
Average forward
current
I_F(AV)
T_C ≤ 135 ^oC
200
Non-repetitive
forward surge
current, half sine-
wave
I_FSM
T_C = 25 ^oC
t_p = 8.3 ms
1500
MBR20060CT
(R)
60
42
60
200
1500
MBR20080CT
(R)
80
56
80
200
1500
MBR200100C
T(R)
100
70
100
200
1500
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20045CT
(R)
DC forward voltage
V_F
I_F = 100 A
T_J = 25 ^oC
0.68
V_R = 20 V
DC reverse current
I_R
T_J = 25 ^oC
V_R = 20 V
T_J = 125^oC
5
200
MBR20060CT
(R)
0.76
5
200
MBR20080CT
(R)
0.88
5
200
MBR200100C
T(R)
0.88
5
200
Units
V
mA
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
MBR20045CT
(R)
Thermal resistance
junction to case
R_thJ-C
0.5
Operating, storage
temperature range
T_J , T_stg
- 40 to +175
MBR20060CT
(R)
0.5
- 40 to +175
MBR20080CT
(R)
0.5
- 40 to +175
MBR200100C
T(R)
0.5
- 40 to +175
Units
o_C/W
o_C
1
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