MBR12020CT Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – SCHOTTKY DIODES MODULE TYPE 120A

Naina Semiconductor Ltd.
MBR12020CT thru
MBR12040CTR
Features
Silicon Schottky Diode, 120A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V V_RRM
TWIN TOWER PACKAGE
Maximum Ratings (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12020CT
(R)
Repetitive peak
reverse voltage
V_RRM
20
RMS reverse voltage V_RMS
14
DC blocking voltage V_DC
20
Average forward
current
I_F(AV)
T_C ≤ 140 ^oC
120
Non-repetitive
forward surge
current, half sine-
I_FSM
T_C = 25 ^oC
t_p = 8.3 ms
800
wave
MBR12030CT
(R)
30
21
30
120
800
MBR12035CT
(R)
35
25
35
120
800
MBR12040CT
(R)
40
28
40
120
800
Units
V
V
V
A
A
Electrical Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12020CT
(R)
DC forward voltage
V_F
I_F = 60 A
T_J = 25 ^oC
0.68
V_R = 20 V
DC reverse current
I_R
T_J = 25 ^oC
V_R = 20 V
T_J = 125^oC
3
200
MBR12030CT
(R)
0.68
3
200
MBR12035CT
(R)
0.68
3
200
MBR12040CT
(R)
0.68
3
200
Units
V
mA
Thermal Characteristics (T_J = 25^oC unless otherwise specified)
Parameter
Symbol
MBR12020CT
(R)
Thermal resistance
junction to case
R_thJ-C
0.8
Operating, storage
temperature range
T_J , T_stg
- 40 to +175
MBR12030CT
(R)
0.8
- 40 to +175
MBR12035CT
(R)
0.8
- 40 to +175
MBR12040CT
(R)
0.8
- 40 to +175
Units
o_C/W
o_C
1
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