BA159 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Fast Recovery Diode, 1.0A

Naina Semiconductor Ltd.
BA159
Features
• Diffused junction
• High efficiency
• Low forward voltage drop
• Low power loss
• High surge current capability
Fast Recovery Diode, 1.0A
Mechanical Characteristics
• Case: Molded Plastic
• Cathode indicated by Polarity band
• Mounting position: Any
• Terminals: Finish Tin plated, Solderable per
MIL-STD-202, Method 208
• Weight: 0.33 grams (approx.)
Maximum Ratings (T_A = 25⁰C unless otherwise specified)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current @ T_A = 50⁰C
Peak forward surge current (8.3ms) single half sine-wave
superimposed on rated load
Symbol
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Electrical Characteristics (T_A = 25⁰C unless otherwise specified)
Parameters
Maximum DC forward voltage drop @ 1.0A DC
Maximum DC reverse current @ rated DC blocking ^TA ^{= 250C}
voltage
T_A = 100⁰C
Maximum reverse recovery time
Symbol
V_F
I_R
t_RR
Thermal and Mechanical Specifications (T_A = 25⁰C unless otherwise specified)
Parameters
Symbol
Typical thermal resistance, junction to ambient
R_θJA
Operating and Storage temperature range
T_J , T_Stg
DO-41
BA159
1000
700
1000
1.0
30
Units
V
V
V
A
A
BA159
1.2
5.0
50
500
Units
V
µA
ns
Values
65
- 65 to + 150
Units
0_C/W
0_C
1
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[e-mail] • www.nainasemi.com