6A05 Datasheet, PDF (1/2 Pages) Surge Components – 6.0 AMPS. SILICON RECTIFIERS

Naina Semiconductor Ltd.
Silicon Rectifier, 6.0A
Features
• Diffused junction
• Low cost
• Low reverse leakage current
• High current capability & low forward voltage drop
• Plastic material carrying UL recognition 94V-0
• Polarity: Color Band denotes Cathode
• Lead free finish
6A05 - 6A10
Thermal and Mechanical Specifications (T_A = 25⁰C unless otherwise
specified)
Parameters
Symbol Values Units
Maximum operating junction
temperature range
T_J
-55 to
0_C
+150
Maximum storage temperature range T_Stg
-55 to
+150
0_C
Typical thermal resistance junction to
ambient
R_θJA
10
0_C/W
Approximate weight
W
2.1
g
JEDEC R-6
Electrical Characteristics (T_A = 25⁰C unless otherwise specified)
Parameter
Symbol 6A05 6A1 6A2 6A4 6A6 6A8 6A10
Maximum repetitive peak reverse
voltage
V_RRM
50 100 200 400 600 800 1000
Maximum RMS voltage
V_RMS
35 70 140 280 420 560 700
Maximum DC blocking voltage
V_DC
50 100 200 400 600 800 1000
Maximum average forward output
current @ T_A = 50⁰C
I_F(AV)
6.0
Peak forward surge current (8.3ms)
single half sine-wave superimposed
I_FSM
400
on rated load
Maximum DC forward voltage drop
per element @ 10 A
V_F
0.9
Typical junction capacitance
CJ
150
Maximum DC reverse
T_A = 25⁰C
10
current at rated DC
I_R
blocking voltage
T_A = 100⁰C
100
Units
V
V
V
A
A
V
pF
µA
1
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