60NT3 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Non-isolated Thyristor Module

Naina Semiconductor Ltd.
60NT3
Non-isolated Thyristor Module
Features
• Low voltage three-phase
• High surge current of 2500A @ 60Hz
• Easy construction
• Non-isolated
• Mounting base as common anode
Voltage Ratings (T_C = 25^OC unless otherwise specified)
Parameter
Symbol Values Units
Maximum repetitive peak
reverse voltage
V_RRM
300
V
Maximum non-repetitive
peak reverse voltage
V_RSM
360
V
Maximum repetitive peak
off-state voltage
V_DRM
300
V
Electrical Characteristics (T_C = 25^OC unless otherwise specified)
Parameter
Conditions
Average on-state current
R.M.S. on-state current
Single phase, half-wave, 180⁰
conduction @ T_C = 116⁰C
On-state surge current
I²t required for fusing
half cycle, 50Hz/60Hz, peak value,
non-repetitive
Peak gate power dissipation
Average gate power dissipation
Peak gate current
Peak gate voltage (forward)
Peak gate voltage (reverse)
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
I₀ = 200mA, V₀ = ½ V_DRM , dI_G/dt = 1
A/µs
T_J = 150⁰C, V₀ = ^2/3 V_DRM , exponential
wave
Holding current
NT3
Symbol
I_T(AV)
I_T(RMS)
I_TSM
I²t
P_GM
P_GM(AV)
I_GM
VFGM
VRGM
di/dt
dv/dt
I_H
Values
60
94
1900
14000
10
1
3
10
5
50
50
100
Units
A
A
A
A²S
W
W
A
V
V
A/µs
V/µs
mA
Thermal & Mechanical Specifications (T_C = 25^OC unless otherwise specified)
Parameter
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
Symbol
T_J
T_STG
R_th(JC)
Values
-30 to +150
-30 to +125
0.35
Units
0_C
0_C
0_C/W
1
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