56NTT Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Thyristor - Thyristor Module

Naina Semiconductor Ltd.
56NTT
Thyristor – Thyristor Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
Maximum Ratings (T_A = 25⁰C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ T_J =
85⁰C
I_F(AV)
56
Maximum average RMS forward current
I_F(RMS)
130
Maximum non-repetitive surge current @ t
= 10ms
I_FSM
1300
Maximum I²t for fusing @ t = 10ms
I²t
8000
Units
A
A
A
A²s
M1 PACKAGE
Thermal & Mechanical Specifications (T_A = 25⁰C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
T_J
R_th(JC)
Values
-65 to +125
0.55
Units
0_C
0_C/W
Electrical Characteristics (T_A = 25⁰C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
I_T(max)
V_RRM
V_FM
I_GT
V_GT
I_H
I_L
dv/dt
V_ISO
Values
56
200 to 1600
1.2
100
2
5 to 100
400
300
2500
Units
A
V
V
A
V
mA
mA
V/µs
V
1
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