40NT_17 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Phase Control Thyristors (Stud & Lead Type), 40A

Naina Semiconductor Ltd.
40NT
Phase Control Thyristors (Stud & Lead Type), 40A
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Metric thread type available
• Low thermal resistance
TO-208AC (TO-65)
Voltage Ratings (T_J = 25^oC, unless otherwise noted)
Type number Voltage Code
V_DRM/V_RRM, Maximum repetitive
peak and off-state voltage
(V)
20
200
40
400
60
600
40NT
80
800
100
1000
120
1200
160
1600
V_RSM, Maximum non-
repetitive peak voltage
(V)
300
500
700
900
1100
1300
1700
I_DRM/I_RRM, Maximum at
T_J=T_J Maximum
(mA)
10
Electrical Ratings (T_J = 25^oC, unless otherwise noted)
Parameters
Maximum on-state average current
T_J = 85^oC
Maximum RMS on-state current
Maximum peak, one cycle non-repetitive surge current
Maximum I²t for fusing
Maximum peak on-state voltage
Maximum holding current
Maximum latching current
T_J = 25^oC, 10 ms
T_J = 130^oC, 10 ms
T_J = 25^oC, 10 ms
T_J = 130^oC, 10 ms
T_J = 25^oC
T_J = 25^oC
T_J = 25^oC
Maximum rate of rise of turn-on current
T_J = T_J max.
Maximum critical rate of rise of off-state voltage
Maximum gate current required to trigger
Maximum gate voltage required to trigger
T_J = T_J max.
T_J = 25^oC
T_J = 25^oC
Symbol
I_T(AV)
I_T(RMS)
I_TSM
I²t
V_TM
I_H
I_L
di/dt
dv/dt
I_GT
V_GT
Values
40
63
700
600
2450
1800
1.95
200
400
150
500
150
3
Units
A
A
A
A²s
V
mA
mA
A/µs
V/µs
mA
V
Thermal and Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
T_J
T_Stg
R_th(JC)
Mounting torque
F
Approximate weight
W
Values
- 40 to +130
- 50 to +150
0.7
3.5
21
Units
o_C
o_C
o_C/W
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com