400NS_17 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Standard Recovery Diodes (Stud and Flat Base Type), 400A

Naina Semiconductor Ltd.
400NS(R)
Standard Recovery Diodes (Stud and Flat Base Type), 400A
Features
 Diffused Series
 Industrial grade
 Available in Normal and Reverse polarity
 Metric and UNF thread type
Electrical Specifications (TA = 25^oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. forward current @ TC = 150^oC
400
A
VFM
Maximum peak forward voltage drop @ rated
IF(AV)
1.5
V
IFSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
8250 A
I²t Maximum I²t rating (non-rep) for fusing
340000 A²sec
DO-205AB (DO-9)
Voltage Ratings (TA = 25^oC, unless otherwise noted)
Type Voltage
number Code
10
VRRM, Maximum
repetitive peak
reverse voltage
(V)
100
VR(RMS),
Maximum RMS
reverse voltage
(V)
70
20
200
140
40
400
280
60
600
420
400NS(R)
80
800
560
100
1000
700
120
1200
140
1400
160
1600
840
980
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IRRM, Maximum
reverse leakage
current at TJ Max
(mA)
15
Thermal & Mechanical Specifications (TA = 25^oC, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ
Operating junction temperature range
Tstg
Storage temperature
F
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
0.15
-40 to 150
-40 to 200
35 ± 10%
250
Units
o_C/W
o_C
o_C
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com