400-NSR Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Standard Recovery Diodes (Stud and Flat Base Type), 400A

Naina Semiconductor Ltd.
400NS(R)
Standard Recovery Diodes (Stud and Flat Base Type), 400A
Features
• Diffused Series
• Industrial grade
• Available in Normal and Reverse polarity
• Metric and UNF thread type
Electrical Specifications (T_A = 25^oC, unless otherwise noted)
Symbol
Parameters
Values Units
I_F(AV) Maximum avg. forward current @ T_E = 150^oC
400
A
V_FM
Maximum peak forward voltage drop @ rated
I_F(AV)
1.4
V
I_FSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
8250 A
I_FRM Maximum peak repetitive surge current
I²t
Maximum I²t rating (non-rep) for 5 to 10
msec
16000 A
340000 A²sec
DO-205AB (DO-9)
Voltage Ratings (T_A = 25^oC, unless otherwise noted)
Type Voltage
number Code
V_RRM, Maximum
repetitive peak
reverse voltage
(V)
V_R(RMS), Maximum
RMS reverse
voltage
(V)
10
100
70
20
200
140
40
400
280
60
600
420
400NS(R)
80
800
560
100
1000
700
120
1200
840
140
1400
980
160
1600
1120
V_R, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
I_R(AV), Maximum
avg. reverse
leakage current
(µA)
200
Thermal & Mechanical Specifications (T_A = 25^oC, unless otherwise noted)
Symbol
Parameters
R_th(JC)
T_J
T_stg
F
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
0.15
-65 to 150
-65 to 200
3.2 (min) – 3.7 (max)
260
Units
o_C/W
o_C
o_C
G
1
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