320NS_17 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Standard Recovery Diodes (Stud and Flat Base Type), 320A

Naina Semiconductor Ltd.
320NS(R)
Standard Recovery Diodes (Stud and Flat Base Type), 320A
Features
 Diffused Series
 Industrial grade
 Available in Normal and Reverse polarity
 Metric and UNF thread type
Electrical Specifications (TA = 25^oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. forward current @ TC = 150^oC 320
A
VFM
Maximum peak forward voltage drop @
rated IF(AV)
IFSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
I²t
Maximum I²t rating (non-rep) for 5 to 10
msec
1.4
V
5600 A
156800 A²sec
DO-205AB (DO-9)
Voltage Ratings (TC = 25^oC, unless otherwise noted)
Type
number
Voltage
Code
VRRM, Maximum repetitive peak
reverse voltage
(V)
10
20
40
60
320NS(R)
80
100
120
140
160
100
200
400
600
800
1000
1200
1400
1600
VR(RMS), Maximum RMS
reverse voltage
(V)
70
140
280
420
560
700
840
980
1120
IRRM, Maximum reverse
leakage current at TJ Max
(mA)
15
Thermal & Mechanical Specifications (TC = 25^oC, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ
Operating junction temperature range
Tstg
Storage temperature
F
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
0.18
-50 to 150
-50 to 180
35 ± 10%
250
Units
o_C/W
o_C
o_C
Nm
g
1
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[e-mail] • www.nainasemi.com