1N6391_1 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Schottky Barrier Rectifier Diode

Naina Semiconductor Ltd.
1N6391
Schottky Barrier Rectifier Diode
Features
• Fast Switching
• Low forward voltage drop, V_F
• Guard ring protection
• High surge capacity
• High efficiency, low power loss
Electrical Ratings (T_C = 25⁰C, unless otherwise noted)
Parameter
Symbol Values Units
Repetitive peak reverse voltage
DC blocking voltage
V_RRM
45
V
V_DC
Non-repetitive peak reverse
voltage
V_RSM
54
V
Average rectified forward current
(T_C = 85⁰C)
I_F(AV)
25
A
Non-repetitive peak surge current
(surge applied at rated load
conditions, halfwave, single phase,
I_FSM
600
A
60 Hz
Maximum Ratings (T_C = 25⁰C, unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at rated DC voltage
DO-203AA (DO-4)
Test Conditions
I_F = 5 A
I_F = 50 A
T_C = 125^OC
T_C = 100^OC
Symbol
V_F
I_R
Values
0.44
0.78
40
400
Units
V
V
mA
mA
Thermal & Mechanical Specifications (T_E = 25⁰C, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to case
R_th(JC)
Operating junction temperature range
T_J
Storage temperature
T_stg
Mounting torque (non-lubricated threads)
Approximate allowable weight
W
Values
2.0
-65 to +125
-65 to +125
15
45.6
Units
0_C/W
0_C
0_C
in-lb
g