1N6097 Datasheet, PDF (1/2 Pages) Microsemi Corporation – 50 Amp Schottky Rectifier

Naina Semiconductor Ltd.
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 50A
1N6097 thru
1N6098R
DO-203AB (DO-5)
Maximum Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Test Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
T_C ≤ 100^oC
T_C = 25^oC
Forward voltage
Reverse current
I_F = 50 A
T_J = 25^oC
V_R = 30V, T_J = 25^oC
V_R = 30V, T_J = 125^oC
Symbol
V_RRM
V_RMS
V_DC
I_F
I_FSM
V_F
I_R
1N6097(R)
30
21
30
50
400
0.7
5
250
1N6098(R)
40
28
40
50
400
0.7
5
250
Units
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
R_th(JC)
T_J
T_stg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
1N6097(R)
1N6098(R)
1.0
-65 to 150
-65 to 175
4.0
17.0
Units
o_C/W
o_C
o_C
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com