1N5829 Datasheet, PDF (1/2 Pages) Micro Commercial Components – 25 Amp Schottky Barrier Rectifier 20 to 35 Volts

Naina Semiconductor Ltd.
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 25A
1N5829 thru
1N5831R
DO-203AA (DO-4)
Maximum Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Test Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
Forward voltage
Reverse current
T_C ≤ 100^oC
T_C = 25^oC
t_p = 8.3 ms
I_F = 25 A
T_J = 25^oC
V_R = 20V, T_J = 25^oC
V_R = 20V, T_J = 125^oC
Symbol
V_RRM
V_RMS
V_DC
I_F
I_FSM
V_F
I_R
1N5829(R)
20
14
20
25
800
0.58
2
250
1N5830(R)
25
17
25
25
800
0.58
2
250
1N5831(R)
35
25
35
25
Units
V
V
V
A
800
A
0.58
V
2
mA
250
Thermal & Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Symbol 1N5829(R)
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
R_th(JC)
T_J
T_stg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
1N5830(R)
1.8
-55 to 150
-55 to 175
2.0
5.0
1N5831(R)
Units
o_C/W
o_C
o_C
Nm
g
1
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