1N5826 Datasheet, PDF (1/2 Pages) Microsemi Corporation – 15 Amp Schottky Rectifier

Naina Semiconductor Ltd.
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 15A
1N5826 thru
1N5828R
DO-203AB (DO-5)
Maximum Ratings (T_J = 25^oC, unless otherwise noted)
Parameter
Test Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
T_C ≤ 100^oC
T_C = 25^oC
Forward voltage
Reverse current
I_F = 15 A
T_J = 25^oC
V_R = 20V, T_J = 25^oC
V_R = 20V, T_J = 125^oC
Symbol
V_RRM
V_RMS
V_DC
I_F
I_FSM
V_F
I_R
1N5826(R)
20
14
20
15
500
0.45
10
250
1N5827(R)
30
21
30
15
500
0.47
10
250
1N5828(R)
40
28
40
15
Units
V
V
V
A
500
A
0.5
V
10
mA
250
Thermal & Mechanical Specifications (T_J = 25^oC, unless otherwise noted)
Parameters
Symbol 1N5826(R)
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
R_th(JC)
T_J
T_stg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
1N5827(R)
1.8
-65 to 150
-65 to 175
4.0
17.0
1N5828(R)
Units
o_C/W
o_C
o_C
Nm
g
1
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