1N3765 Datasheet, PDF (1/2 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Naina Semiconductor Ltd.
1N3765 thru
1N3768R
Standard Recovery Diode, 35A
Features
 Glass passivated die
 Low forward voltage drop
 High surge capability
 Low leakage current
 Normal and Reverse polarity
 Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25^oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N3765(R)
Repetitive peak
reverse voltage
VRRM
700
RMS reverse voltage
VRMS
490
DC blocking voltage
VDC
700
Continuous forward
current
TC ≤ 140^oC
IF(AV)
35
Surge non-repetitive
forward current,
half-sine wave
TC = 25^oC
IFSM
475
Maximum peak
forward voltage
TJ = 25^oC
VF
1.2
Reverse current
TJ = 25^oC
TJ = 140^oC
IR
10
10
1N3766(R)
800
560
800
35
475
1.2
10
10
1N3767(R)
900
630
900
35
475
1.2
10
10
1N3768(R)
1000
700
1000
35
475
1.2
10
10
Units
V
V
V
A
A
V
µA
mA
Thermal & Mechanical Specifications (TJ = 25^oC, unless otherwise noted)
Parameters
Symbol 1N3765(R) 1N3766(R) 1N3767(R)
Thermal resistance, junction to case
Rth(JC)
0.25
0.25
0.25
Operating junction temperature range
TJ -55 to 160 -55 to 160 -55 to 160
Storage temperature
Tstg -55 to 160 -55 to 160 -55 to 160
Mounting torque, non-lubricated threads,
tighting on nut
F
3.4 ± 10%
Approximate weight
W
16
1N3768(R)
0.25
-55 to 160
-55 to 160
Units
o_C/W
o_C
o_C
Nm
g
1
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