1N3288 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – High Current Rectifier

1N3288-1N3297
SILICON POWER DIODE
NAINA
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
I_F
Maximum Average Forward
Current Te=125⁰C
VFM Maximum peak forward
voltage drop @ Rated IF(AV)
I_FSM
Maximum peak one cycle
(non-rep) surge current 10 m sec
I_FRM
Maximum peak repetitive
surge current
I²t Maximum I²t rating (non-rep.) for
5 to 10 msec.
100A
1.5V
2200A
500 A
24000 A² Sec
THERMAL MECHANICAL SPECIFICATIONS
θJC
Tj
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
ELECTRICAL RATINGS
0.40⁰C/W
-65⁰C to 150⁰C
-65⁰C to 200⁰C
2.0 M-kg min,
3.0 M-kg max
150 gms.
TYPE
VRRM
Max. repetitive peak reverse
voltage (v)
1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296
100 200 300 400 500 600 800 1000 1200
VR(RMS) Max. R.M.S. reverse voltage(V) 70 140 210 280 350 420 560 700 840
VR
IR(AV)
Max. D.C. Blocking Voltage (V) 100 200 300 400 500 600 800 1000 1200
Recommended R.M.S. working _{40 80 120 160 200 240}
Voltage(v)
Max. Average reverse leakage _{200 200 200 200}
current @ VRRM Tc 25⁰C (uA)
200 200
NAINA SEMICONDUCTOR LTD.,
D-95 ,SECTOR -63 NOIDA(INDIA)
e-mail:[e-mail], web site: www.nainasemi.com
320 400 480
200 200 ²⁰⁰