1N2128A Datasheet, PDF (1/2 Pages) America Semiconductor, LLC – DEVICE HIGH POWER STANDARD

Naina Semiconductor Ltd.
1N2128A thru
1N2131AR
Standard Recovery Diode, 60A
Features
 Glass passivated die
 Low forward voltage drop
 High surge capability
 Low leakage current
 Normal and Reverse polarity
 Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25^oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N2128A(R)
Repetitive peak
reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
VDC
50
Continuous forward
current
TC ≤ 150^oC
IF(AV)
60
Surge non-repetitive
forward current,
half-sine wave
TC = 25^oC
IFSM
1050
Maximum peak
forward voltage
IF = 60A, TJ = 25^oC
VF
1.1
Reverse current
TJ = 25^oC
TJ = 140^oC
IR
10
15
1N2129A(R)
100
70
100
60
1050
1.1
10
15
1N2130A(R)
150
105
150
60
1050
1.1
10
15
1N2131A(R)
200
140
200
60
1050
1.1
10
15
Units
V
V
V
A
A
V
µA
mA
Thermal & Mechanical Specifications (TJ = 25^oC, unless otherwise noted)
Parameters
Symbol 1N2128A(R) 1N2129A(R) 1N2130A(R)
Thermal resistance, junction to case
Rth(JC)
0.65
0.65
0.65
Operating junction temperature range
TJ -55 to 160 -55 to 160 -55 to 160
Storage temperature
Tstg -55 to 160 -55 to 160 -55 to 160
Mounting torque, non-lubricated threads,
tighting on nut
F
3.4 ± 10%
Approximate weight
W
16
1N2131A(R)
0.65
-55 to 160
-55 to 160
Units
o_C/W
o_C
o_C
Nm
g
1
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