16NS_17 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Standard Recovery Diodes (Stud Version), 16A

Naina Semiconductor Ltd.
16NS(R)
Standard Recovery Diodes (Stud Version), 16A
Features
 Diffused Series
 Industrial grade
 Available in Normal and Reverse polarity
 Metric and UNF thread type
Electrical Specifications (TA = 25^oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. forward current @ TA = 150^oC
16
A
VFM
Maximum peak forward voltage drop @ rated
IF(AV)
IFSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
I²t Maximum I²t rating (non-rep) for fusing
1.3
V
300
A
450 A²sec
DO-203AA (DO-4)
Voltage Ratings (TA = 25^oC, unless otherwise noted)
Type Voltage
number Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
RMS reverse
voltage
(V)
10
100
70
20
200
140
40
400
280
60
600
420
16NS(R)
80
800
560
100
1000
700
120
1200
840
140
1400
980
160
1600
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IRRM, Maximum
reverse leakage
current
(mA)
12
Thermal & Mechanical Specifications (TA = 25^oC, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ
Operating junction temperature range
Tstg
Storage temperature
F
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
1.5
-65 to 150
-65 to 150
1.5 ± 10%
7
Units
o_C/W
o_C
o_C
Nm
g
1
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