160NTD Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Thyristor - Diode Module

Naina Semiconductor Ltd.
Thyristor – Diode Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
160NTD
Maximum Ratings (T_A = 25⁰C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ T_J =
85⁰C
I_F(AV)
160
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
Maximum I²t for fusing @ t = 10ms
I_F(RMS)
I_FSM
I²t
350
5100
120
Units
A
A
A
kA²s
Thermal & Mechanical Specifications (T_A = 25⁰C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
T_J
R_th(JC)
M3 PACKAGE
Values
-65 to +125
0.16
Units
O_C
O_C/W
Electrical Characteristics (T_A = 25⁰C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
I_T(max)
V_RRM
V_FM
I_GT
V_GT
I_H
I_L
dv/dt
V_ISO
Values
160
200 to 1600
1.5
150
2.5
200
500
1000
3500
Units
A
V
V
mA
V
mA
mA
V/µs
V
1
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