150U Datasheet, PDF (1/1 Pages) Naina Semiconductor ltd. – SILICON POWER DIODE

150U/150UR
SILICON POWER DIODE
NAINA
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
I_F
Maximum Average Forward
Current Te=125⁰C
150A
VFM Maximum peak forward
voltage drop @ Rated IF(AV)
1.4V
I_FSM
Maximum peak one cycle
(non-rep) surge current 10 m sec
3000A
I_FRM
Maximum peak repetitive
surge current
750A
I²t Maximum I²t rating (non-rep.) for 45,000 A2 Sec
5 to 10 msec.
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
ELECTRICAL RATINGS
0.25⁰C/W
-65⁰C to 150⁰C
-65⁰C to 200⁰C
2.0 M-kg min,
3.0 M-kg max
150 gms.
TYPE
VRRM
150U/150UR
10
Max. repetitive peak reverse ₁₀₀
voltage (v)
VR(RMS) Max. R.M.S. reverse voltage (V) 70
20 40 60
200 400 600
140 280 420
80 100
800 1000
120 140 160
1200 1400 1600
560 700 840 980 1120
VR
IR(AV)
Max. D.C. Blocking Voltage (V) 100 200 400 600 800 1000 1200 1400 1600
Recommended R.M.S. working _{40 80 160 240 320 400}
Voltage(v)
480 560 640
Max. Average reverse leakage _{200 200 200 200}
current @ VRRM Tc 25⁰C (uA)
200 200
200 200 200
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63, NOIDA(INDIA)
e-mail:[e-mail], web site: www.nainasemi.com