150NT_17 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Phase Control Thyristors (Stud Type), 150A

Naina Semiconductor Ltd.
150NT
Phase Control Thyristors (Stud Type), 150A
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Metric thread type available
• Low thermal resistance
Electrical Ratings (T_A = 25^oC, unless otherwise noted)
Parameters
Maximum on-state average current 180^o
sinusoidal conduction @ T_J = 85^oC
Symbol
I_T(AV)
Maximum RMS on-state current
I_T(RMS)
Maximum peak, one cycle non-repetitive surge
current
I_TSM
Maximum I²t for fusing
I²t
Maximum repetitive peak on and off-state
voltage range
Maximum peak on-state voltage (T_J = 25^oC, I_peak =
79A)
V_RRM,
V_DRM
V_TM
Maximum holding current @ T_J
I_H
Maximum latching current @T_J
I_L
Maximum rate of rise of turn-on current, V_DRM ≤
600V
di/dt
Critical rate of rise of
off-state voltage
T_J = T_J maximum,
100% V_DRM
T_J = T_J maximum, 67%
V_DRM
dv/dt
Maximum gate current anode supply 6 V
required to trigger
resistive load @T_J
I_GT
Maximum gate voltage
required to trigger
V_GT
Values Units
150
A
235
A
5700
A
163000 A²s
400 to
1600
V
1.8
V
200
mA
400
mA
200 A/µs
200
V/µs
400
150
mA
2.0
V
TO-209AB (TO-93)
Thermal and Mechanical Specifications (T_A = 25^oC, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
T_J
Maximum storage temperature range
T_Stg
Maximum thermal resistance, junction to case
R_th(JC)
Mounting torque
F
Approximate weight
W
Values
- 60 to +125
- 60 to +125
0.11
0.2(min) to 0.3(max)
14
Units
o_C
o_C
o_C/W
mkg
g
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com