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130NDD Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Diode - Diode Module | |||
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Naina Semiconductor Ltd.
Diode â Diode Module
Features
⢠Improved glass passivation for high reliability
⢠Exceptional stability at high temperatures
⢠High di/dt and dv/dt capabilities
⢠Low thermal resistance
130NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values Units
Maximum average forward
current @ TJ = 850C
IF(AV)
130
A
Maximum average RMS
forward current
IF(RMS)
204
A
Maximum non-repetitive
surge current @ t = 10ms
IFSM
Maximum I2t for fusing @ t =
10ms
I2t
3600
A
53
kA2s
M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
TJ
Thermal resistance, junction to case
Rth(JC)
Values
-65 to +125
0.2
Units
0C
0C/W
Electrical Characteristics (TA = 25OC unless otherwise noted)
Parameter
Maximum average on-state current, 1800C sinusoidal
Maximum repetitive peak reverse voltage range
Forward voltage drop
RMS isolation voltage
Symbol
IT(max)
VRRM
VFM
VISO
Values
130
200 to 1600
1.35
2500
Units
A
V
V
V
1
D-95, Sector 63, Noida â 201301, India ⢠Tel: 0120-4205450 ⢠Fax: 0120-4273653
sales@nainasemi.com ⢠www.nainasemi.com
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