12SQ030-12SQ100 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Schottky Barrier Rectifier, 12.0 A

Naina Semiconductor Ltd.
12SQ030 thru
12SQ100
Schottky Barrier Rectifier, 12.0 A
Features
• Diffused junction
• Low cost
• Low reverse leakage current
• High surge current capability & low forward voltage drop
• Polarity: Color Band denotes Cathode
• High efficiency
Mechanical Data
• Case: JEDEC R-6 molded plastic
• Polarity: Color band denotes cathode
• Weight: 2.1 grams
• Mounting position: Any
Thermal Specifications (T_C = 25^oC unless otherwise specified)
Parameters
Symbol Values
Maximum operating junction temperature range T_J -55 to +200
Maximum storage temperature range
T_STG -55 to +200
Typical thermal resistance junction to case
R_θJC
3.0
Units
o_C
o_C
o_C/W
JEDEC R-6
Electrical Characteristics (T_C = 25^oC unless otherwise specified)
Parameter
Symbol 12SQ030 12SQ035 12SQ040
Maximum repetitive peak
reverse voltage
V_RRM
30
35
40
Maximum RMS voltage
V_RMS
21
24.5
28
Maximum DC blocking
voltage
V_DC
30
35
40
Maximum average
forward output current @ I_F(AV)
T_C = 95⁰C
Peak forward surge
current (8.3ms) single half
sine-wave superimposed
I_FSM
on rated load
Forward voltage drop @
12A DC (Note 1)
V_F
0.55
Typical junction
capacitance (Note 2)
CJ
Maximum DC
T_A =
reverse current ^250C
at rated DC
T_A =
I_R
blocking voltage ₁₀₀⁰_C
NOTES:
(1) 300 µs, pulse width, 2% duty cycle
(2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC.
12SQ045 12SQ050 12SQ060
45
50
60
31.5
35
42
45
50
60
12
275
0.7
450
0.5
50
12SQ080 12SQ100
80
100
56
70
80
100
0.8
Units
V
V
V
A
A
V
pF
mA
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com