12NSF_17 Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Fast Recovery Diodes, 12A

Naina Semiconductor Ltd.
Fast Recovery Diodes, 12A
Features
• Diffused Series
• Short reverse recovery time
• Excellent surge capabilities
• Industrial grade
• Available in Normal and Reverse polarity
• Optional Avalanche Characteristic
12NSF(R)
Electrical Specifications (T_A = 25⁰C, unless otherwise noted)
Symbol
Parameters
Values Units
I_F(AV) Maximum avg. forward current
12
A
V_FM
Maximum peak forward voltage drop @
rated I_F(AV)
1.4
V
I_FSM
Maximum peak one cycle (non-rep) surge
current
150
A
I²t Maximum I²t rating (non-rep)
110
A²sec
t_rr Reverse recovery time
350
ns
DO-203AA (DO-4)
Voltage Ratings (T_A = 25⁰C, unless otherwise noted)
Type Voltage
number Code
V_RRM, Maximum
repetitive peak
reverse voltage
(V)
V_R(RMS), Maximum
RMS reverse
voltage
(V)
10
100
70
20
200
140
40
400
280
60
600
420
12NSF(R)
80
800
560
100
1000
700
120
1200
840
140
1400
980
160
1600
1120
V_R, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
I_R, Reverse
leakage current
@ T_J = 25^oC
(µA)
25
Thermal & Mechanical Specifications (T_A = 25⁰C, unless otherwise noted)
Symbol
Parameters
R_th(JC)
Maximum thermal resistance, junction to case
T_J
Operating junction temperature range
T_stg
Storage temperature
F
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
2.1
-55 to 150
-55 to 150
1.5
7
Units
0_C/W
0_C
0_C
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com