12F Datasheet, PDF (1/1 Pages) Vishay Siliconix – Standard Recovery Diodes (Stud Version), 12 A

12F/12FR
12AMP SILICON POWER DIODE
NAINA
DO-4
FEATURES
• All Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICAL SPECIFICATIONS
IF (A) Maximum Average Forward
Current Te=1500C
V_FM Maximum peak forward
voltage drop @ Rated I_F(AV)
I_FSMMaximum peak one cycle
(non-rep) surge current 10msec
I_FRMMaximum peak one cycle (non
-rep) surge current 10msec
I²t
Maximum I²t rating (non-rep.)
for 5 to 10 m sec.
12F/FR
12A
1.2V
250 A
60 A
250A²Sec
THERMAL MECHANICAL SPECIFICATIONS
12F/ 12FR
A
C
C
A
F FR
11A/F
4
19
10
11.5
M6 x 1.0
θJC
Maximum thermal resistance Junction to case
TJ
Operating Junction Temp.
Tstg
Storage temperature
Mounting torque (non-lubricated threads)
W
Approx, weight
2^oC/W
-65^oC to 150^oC
-65^oC to 150^oC
0.14 M-Kg min, 0.17 M-kg max
7 gms.
ELECTRICAL RATINGS
TYPE
12F/12FR
10 20 40 60
VRRM
Max. repetitive peak
voltage (v)
VR(RMS) Max. R.M.S. reverse voltage (V)
100 200 400 600
70 140 280 420
VR
IR(AV)
Max. D.C. Blocking Voltage (V) 100 200 400 60
Recommended R.M.S. working _{40 80 160 240}
Voltage(v)
Max. Average reverse leakage _{100 100 100 100}
current @ VRMM Tc 250C uA
80 100 120 140 160
800 1000 1200 1400 1600
560 700
800 1000
320 400
840 980 1120
1200 1400 1600
480 560 640
100 100 100 100 100
NAINA SEMICONDUCTOR LTD.
D95,SECTOR 63 NOIDA(INDIA)
e-mail : [e-mail], web site : www.nainasemi.com