125NT Datasheet, PDF (1/2 Pages) Naina Semiconductor ltd. – Phase Control Thyristors, 125A

Naina Semiconductor Ltd.
125NT
Phase Control Thyristors, 125A
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Metric thread type available
• Low thermal resistance
Electrical Ratings (TJ = 25⁰C, unless otherwise noted)
Parameters
Maximum on-state average current 180^O
sinusoidal conduction @ T_J = 85⁰C
Symbol
I_T(AV)
Values
125
Maximum RMS on-state current
I_T(RMS)
196
Maximum peak, one cycle non-repetitive
surge current
Maximum I²t for fusing
I_TSM
3500
I²t
61250
Maximum repetitive peak on and off-state
voltage range
Maximum peak on-state voltage (T_J = 25⁰C,
I_peak = 79A)
V_RRM,
V_DRM
V_TM
400 to
1600
1.2
Maximum holding current @ T_J
I_H
250
Maximum latching current @T_J
I_L
600
Maximum rate of rise of turn-on current,
V_DRM ≤ 600V
di/dt
200
T_J = T_J maximum,
300
Critical rate of rise of
off-state voltage
100% V_DRM
T_J = T_J maximum,
67% V_DRM
dv/dt
500
Maximum gate
current required to
trigger
anode supply 6 V
resistive load @T_J
I_GT
150
Maximum gate
voltage required to
trigger
V_GT
3.0
Units
A
A
A
A²s
V
V
mA
mA
A/µs
V/µs
mA
V
TO-209AC (TO-94)
Thermal and Mechanical Specifications (T_J = 25⁰C, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Mounting torque
T_J
T_Stg
R_th(JC)
Approximate weight
Values
- 60 to +125
- 60 to +125
0. 18
0.2(min) to 0.3(max)
14
Units
0_C
0_C
0_C/W
mkg
g
1
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