RO3103A Datasheet, PDF (1/2 Pages) RF Monolithics, Inc – 418.0 MHz SAW Resonator

• Ideal for 418.0 MHz Transmitters
• Very Low Series Resistance
• Quartz Stability
• Surface-mount Ceramic Case
• Complies with Directive 2002/95/EC (RoHS) _Pb
The RO3103A is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case.
It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters
operating at 418 MHz.
RO3103A
418.0 MHz
SAW
Resonator
Absolute Maximum Ratings
Rating
CW RF Power Dissipation
DC Voltage on any Non-ground Terminal
Case Temperature
Soldering Temperature, 10 seconds / 5 cycles maximum
Value
+0
±30
-40 to +125
260
Electrical Characteristics
Characteristic
Center Frequency, +25 °C Absolute Frequency
Tolerance from 418.00 MHz
Insertion Loss
Quality Factor
Unloaded Q
50 Ω Loaded Q
Temperature Stability
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Frequency Aging
Absolute Value during the First Year
DC Insulation Resistance between Any Two Terminals
RF Equivalent RLC Model Motional Resistance
Motional Inductance
Motional Capacitance
Shunt Static Capacitance
Test Fixture Shunt Inductance
Lid Symbolization (in addition to Lot and/or Date Codes)
Sym
f_C
∆f_C
IL
Q_U
Q_L
T_O
f_O
FTC
|f_A|
R_M
L_M
C_M
C_O
L_TEST
Notes
2,3,4,5
2,5,6
5,6,7
6,7,8
1
5
5, 7, 9
5, 6, 9
2, 7
Units
dBm
VDC
°C
°C
Minimum
417.925
Typical
1.5
12100
1550
10
25
f_C
0.032
≤ 10
1.0
15
67.5
2.3
2.3
63
659 || YWWS
SM5035-4
Maximum
418.075
±75
2.0
Units
MHz
kHz
dB
40
°C
ppm/°C²
ppm/yr
MΩ
Ω
µH
fF
pF
nH
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. Frequency aging is the change in f_C with time and is specified at +65 °C or 7. Derived mathematically from one or more of the following directly
less. Aging may exceed the specification for prolonged temperatures
measured parameters: f_C, IL, 3 dB bandwidth, f_C versus T_C, and C_O.
above +65 °C. Typically, aging is greatest the first year after manufacture, 8. Turnover temperature, T_O, is the temperature of maximum (or turnover)
2.
decreasing in subsequent years.
The center frequency, f_C, is measured at the minimum insertion loss point,
IL_MIN, with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The
shunt inductance, L_TEST, is tuned for parallel resonance with C_O at f_C.
Typically, f_OSCILLATOR or f_TRANSMITTER is approximately equal to the
resonator f_C.
9.
frequency, f_O. The nominal frequency at any case temperature, T_C, may be
calculated from: f = f_O [1 - FTC (T_O -T_C)²]. Typically oscillator T_O is
approximately equal to the specified resonator T_O.
This equivalent RLC model approximates resonator performance near the
resonant frequency and is provided for reference only. The capacitance C_O
is the static (nonmotional) capacitance between the two terminals
3. One or more of the following United States patents apply: 4,454,488 and
measured at low frequency (10 MHz) with a capacitance meter. The
4,616,197.
measurement includes parasitic capacitance with "NC” pads unconnected.
4. Typically, equipment utilizing this device requires emissions testing and
Case parasitic capacitance is approximately 0.05 pF. Transducer parallel
government approval, which is the responsibility of the equipment
manufacturer.
5. Unless noted otherwise, case temperature T_C = +25 ± 2 °C.
capacitance can by calculated as: C_P ≈ C_O - 0.05 pF.
10. Tape and Reel standard per ANSI / EIA 481.
6. The design, manufacturing process, and specifications of this device are
subject to change without notice.
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© 2008-2011 by RF Monolithics, Inc.
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RO3103A - 6/29/11