PA4002P Datasheet, PDF (1/3 Pages) MTRONPTI – Suitable for linear pulse applications

9.1-9.5GHz 400W SOLID STATE POWER AMPLIFIER
MtronPTI P/N: PA4002P
FEATURES
Small form factor rack mounted system
High power GaN pulse devices
Instantaneous bandwidth
Suitable for linear pulse applications
Built-in protection circuits
High reliability and ruggedness
ELECTRICAL SPECIFICATIONS
Parameter
Operating Frequency Range
Peak Output Power
Output Power Flatness
Input Power
Saturated Gain
Output Power Control
Pulse Width
Duty Cycle
Pulse Repetition Frequency (PRF)
Rise / Fall Time
Droop
Input / Output VSWR
Harmonics
Phase drift within pulse
Out of Band Spurious levels
Over Temp. Alarm
Load VSWR
Gate Control Inputs
AC Input Voltage
Noise Figure
Detected RF Output
Phase Noise
Specification
9.1 - 9.5 GHz
400 Watt Min
0 to +2 dB
0 - 5 dBm
56 dB Min
6 dB, 50 - 56 dBm, 1 dB steps
0.35 µSec - 50 µSec
20% Max
5 KHz Max, ±5% staggering
75 nsec
<0.8 dB Max
1.5 : 1
-60dBc Max
7.5° Max (Linear)
-65 dBc Max
ON: TTL Low >75°C
OFF: TTL High <70°C
2.5 : 1
PA OFF: TTL High
PA ON: TTL Low
230 VAC, ±10%, 50 Hz ±3 Hz
<10dB
Pout = 0: VDET = 0 - 5 VDC
Pout = Max: VDET = 4 - 4.5 VDC
-70 dBc/Hz @ 100 Hz from carrier
Notes
20% Duty Cycle
Over operating & Temp Range
Pulsed
Measured @ 50% pt.
50 µSec PW, 20% duty
Relative to 50 Ohm
Internal Harmonics Filter
Without damage
TTL pulse precedes RF by
2 µSec
<1kVA
Continuous DC Voltage
ENVIRONMENTAL CHARACTERISTICS
Parameter
Operating Ambient Temperature
Storage Temperature
Relative Humidity
Shock (Bump)
Vibrations
Altitude
EMI/EMC
Specification
-20 to +55°C
-30 to +70°C
95% @ 40°C
25 g for 6 msec, 2-3 Bumps/Sec. 400 Bumps
2m/S² from 20 -50 Hz
2m/S² from 20 -500 Hz
5160 m
Conducted Susceptibility,
Radiated Emissions
Notes
MIL-STD 810F, 502.4/501.4
MIL-STD 810F, 502.4/501.4
MIL-STD 810F, Method 507.4
MIL-STD 810F, Method 516.5
MIL-STD 810F, Method 514.5
MIL-STD 810F, Method 500.4
MIL STD 461E, Method CS101
MIL STD 461E, Method RE102