MSK801_15 Datasheet, PDF (2/6 Pages) M.S. Kennedy Corporation – 10 MHz full power bandwidth min.

ABSOLUTE MAXIMUM RATINGS ⁸
±VCC
VIN
TC
Supply Voltage +18V ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Input Voltage ±V ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
CC
Differential Input Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ±30V
Case Operating Temperature Range
(MSK 801) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -40°C to +125°C
(MSK801B/E) ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
TST Storage Temperature Range ○ ○ -65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 300°C
(10 Seconds Soldering)
PD Power Dissipation ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ See Curve
IOUT Peak Output Current
±200mA ○
○
○
○
○
○
○
○
○
○
○
○
ELECTRICAL SPECIFICATIONS
Parameter
Test Conditions
Quiescent Current
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
VIN=0V
VIN=0V
VIN=0V
Input Offset Current
Output Current
RL=100Ω VOUT=±10V
Output Voltage Swing
RL=100Ω f ≤ 10MHz
Full Power Bandwidth
RL=100Ω VO=±10V
Bandwidth (Small Signal) 2
RL=510Ω
Slew Rate Limit (Pulsed)
RL=100Ω VO=±10V
Large Signal Voltage Gain
RL=1KΩ VO±10V
Settling Time to 1% 1
RL=100Ω VIN=10V
Settling Time to 0.1% ^{1 2}
RL=100Ω VIN=10V
Settling Time to 0.01% 1 2
RL=100Ω VIN=10V
Power Supply Rejection Ratio 2
∆VCC=±5V
Common Mode Rejection Ratio ²
∆VIN=±10V
Input Noise Voltage 2
f=10Hz to 1KHz
Equivalent Input Noise 2
f=1KHz
Gain Bandwidth Product 2
RL=510Ω AV=-20
Slew Rate (Sine Wave) 2
RL=100Ω VO=±10V
Thermal Resistance 2
Junction to Case @ 125°C
±Vcc=±15V Unless Otherwise Specified
Group A
MSK 801B/E
MSK 801
Subgroup Min. Typ. Max. Min. Typ. Max. Units
1
-
±25 ±30
- ±25 ±35 mA
2,3
-
±27 ±32
-
-
-
mA
1
- ±0.5 ±5
- ±0.5 ±10 mV
2,3
-
±10 ±50
- ±10
- µV/°C
1
-
±50 ±500 - ±50 ±750 pA
2,3
- ±0.2 ±10 -
-
-
nA
1
-
10 500
-
10 750 pA
2,3
-
0.1
5
-
-
-
nA
4 ±100 ±120 - ±100 ±120 -
mA
4
±10 ±11.5 - ±10 ±11.5 -
V
4
10 12
-
8 12
-
MHz
4
100 125
-
90 125
-
MHz
4
650 750
-
550 750
- V/µS
4
50 70
-
50 70
-
dB
4
-
40
55
-
40
65
nS
4
-
60
75
-
60
85
nS
-
-
200
-
- 200
-
nS
-
60 70
-
55 70
-
dB
-
70 80
-
65 80
-
dB
-
-
1.5
-
- 1.5
- µVRMS
-
-
40
-
-
40
- nV/√Hz
-
200 250
-
200 250
-
MHz
-
-
700
-
- 700
- V/µS
-
-
65
75
-
65
80 °C/W
NOTES:
1 AV= -1, measured in false summing junction circuit.
2 Guaranteed by design but not tested. Typical parameters are representative of actual device performance
but are for reference only.
3 Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
4 Military grade devices ("B" suffix) shall be 100% tested to subgroups 1,2,3 and 4.
5 Subgroups 5 and 6 testing available upon request.
6 Subgroup 1,4 TA=TC=+25°C
Subgroup 2
TA=TC=+125°C
Subgroup 3
TA=TC=-55°C
7 Consult DSCC SMD 5962-91574 for electrical specifications for devices purchased as such.
8 Continuous operation at or above absolute maximum ratings may adversely effect the device performance
and/or life cycle.
2
Rev. D 9/06