MSK4227S Datasheet, PDF (2/4 Pages) M.S. Kennedy Corporation – 200 VOLT 20 AMP MOSFET H-BRIDGE WITH GATE DRIVE GATE DRIVE

ABSOLUTE MAXIMUM RATINGS
V+
VCC
IOUT
IPK
θJC
High Voltage Supply 200V ○
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Logic Supply 18V ○
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Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○20A
Peak Output Current 44A ○
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Thermal Resistance
(Output Switches @ 125°C)
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○ 2.3°C/W
TST
Storage Temperature Range
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-55°C to +125°C
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TLD
Lead Temperature Range
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300°C
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(10 Seconds)
TC Case Operating Temperature
MSK4227 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -40°C to +85°C
TJ
Junction Temperature
+150°C
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ELECTRICAL SPECIFICATIONS
Tc= +25°C Unless Otherwise Specified
Parameter
Test Conditions 2
OUTPUT CHARACTERISTICS
RDS (ON) 1 4
Each MOSFET ID=20A
VDS(ON) Voltage
Each MOSFET ID=20A 3
Instantaneous Forward Voltage
Each MOSFET IS=20A Intrinsic Diode 3
Reverse Recovery Time 1
Intrinsic Diode
Leakage Current
Each MOSFET V+=200V
+Vcc SUPPLY CHARACTERISTICS
Quiescent Bias Current
Vcc Voltage Range 1
+VB SUPPLY CHARACTERISTICS
Quiescent Bias Current
Bias Current @ 20KHz
+VB Voltage Range
LOGIC CONTROL INPUTS, HINA, LINA, HINB, LINB 1
Input Voltage LO
Input Voltage HI
Input Current (VIN=5V)
SWITCHING CHARACTERISTICS 1
RL=100Ω
Rise Time
Fall Time
Dead Time
Min.
MSK 4227
Typ.
Max.
Units
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0.09
Ω
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1.2
1.8
V
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1.02
1.2
V
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330
nS
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3.0
250
µA
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0.9
3.2
mA
7.4
15
18
V
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100
300
µA
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4
6
mA
9.8
15
18
V
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0.8
V
2.7
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V
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20
µA
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90
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nS
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100
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nS
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1
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µS
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 +Vcc=+15V, +VB=+15V, V+=100V, AV-, BV- = Ground unless otherwise specified.
3 Measured using a 300µS pulse with a 2% Duty Cycle.
4 On Resistance is specified for the Internal MOSFET for Thermal Calculations. It does not include the package pin resistance.
2
Rev. B 11/04