MSK3020_15 Datasheet, PDF (2/6 Pages) M.S. Kennedy Corporation – P and N Channel MOSFETs for Ease of Drive

ABSOLUTE MAXIMUM RATINGS
VDSS Drain to Source Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 100V MAX
VDGDR Drain to Gate Voltage
(RGS=1MΩ) 100V MAX ○
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VGS Gate to Source Voltage
(Continuous) ±20V MAX ○
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ID
Continuous Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A MAX
IDM
Pulsed Current 25A MAX ○
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IM
Sense Current-Continuous ○ ○ ○ ○ ○ ○ ○ ○ ○ 13mA MAX
IMM Sense Current Peak ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 33mA MAX
Single Pulse Avalanche Energy
(Q1,Q4) 7.9mJ ○
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(Q2,Q3) 69mJ ○
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JunctionTemperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +175°C MAX
TJ
Storage Temperature ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +150°C
TST Case Operating Temperature Range -55°C to +125°C
TC Lead Temperature Range
TLD (10 Seconds Lead Only) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 200°C MAX
RTH-JC Thermal Resistance (Junction to Case)
P-Channel @ 25°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 5.2°C/W
P-Channel @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 8.0°C/W
N-Channel @ 25°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 3.3°C/W
N-Channel @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 5.1°C/W
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance 2
Drain-Source on Resistance 3
Forward Transconductance 1
N-CHANNEL (Q2, Q3)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge 1
Test Conditions 4
VGS = 0 ID = 0.25 mA (All Transistors)
VGS = 0 VDS = 100V, (Q2, Q3)
VDS = 100V VGS = 0V, (Q2, Q3)
VDS = -100V VGS = 0V, (Q1, Q4)
VGS = ±20V VDS = 0V (All Transistors)
VDS = VGS ID = 250 μA (Q2, Q3)
VDS = VGS ID = 250 μA (Q1, Q4)
VGS = 10V ID = 8.4A (Q2, Q3)
VGS = -10V ID = -8.4A (Q1, Q4)
VGS = 10V ID = 8.4A (Q2, Q3)
VGS = -10V ID = -8.4A (Q1, Q4)
VDS = 50V ID = 8.4A (Q2, Q3)
VDS = -50V ID = -8.4A (Q1, Q4)
ID = 14A
VDS = 80V
VGS = 10V
VDD = 50V
ID = 14A
RG = 12Ω
RD = 3.5Ω
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V ID = 14A
ID = -8.4A
VDS = -80V
VGS = -10V
VDD = -50V
ID = -8.4A
RG = 9.1Ω
RD = 6.2Ω
VGS = 0V
VDS = -25V
f = 1 MHz
IS = 14A VGS = 0V (Q2, Q3)
IS = -14A VGS = 0V (Q1, Q4)
IS = 14A di/dt = 100A/μS (Q2, Q3)
IS = -8.4A di/dt = 100A/μS (Q1, Q4)
IS = 14A di/dt = 100A/μS (Q2, Q3)
IS = -8.4A di/dt = 100A/μS (Q1, Q4)
MSK 3020
Min. Typ. Max.
100
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100
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25
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-25
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±100
2.0
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4.0
-2.0
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-4.0
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0.26
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0.31
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0.16
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0.20
4.7
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3.2
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9.5
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42
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22
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25
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700
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320
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83
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9
1390
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26
5.5
11
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1540
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58
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8.3
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32
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15
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58
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45
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46
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760
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260
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170
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2.5
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-1.6
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150
310
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47
71
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0.85
1.2
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650
970
Units
V
V
μA
μA
nA
V
V
Ω
Ω
Ω
Ω
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
μC
nC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance
but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA = 25°C unless otherwise specified.
2
Rev. C 7/10