MSK3004_15 Datasheet, PDF (2/6 Pages) M.S. Kennedy Corporation – Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

ABSOLUTE MAXIMUM RATINGS
VDSS Drain to Source Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 55V MAX
VDGDR Drain to Gate Voltage
(RGS=1MΩ) 55V MAX ○
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VGS Gate to Source Voltage
(Continuous) ±20V MAX ○
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ID
Continuous Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A MAX
IDM
Pulsed Current 25A MAX ○
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Single Pulse Avalanche Energy
(Q1,Q4) 71mJ ○
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(Q2,Q3) 96mJ ○
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ELECTRICAL SPECIFICATIONS
TJ
JunctionTemperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+175°C MAX
TST
Storage Temperature
5
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○ -55°C to +150°C
TC Case Operating Temperature Range -55°C to +125°C
TLD Lead Temperature Range
(10 Seconds Lead Only) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 200°C MAX
RTH-JC Thermal Resistance (Junction to Case)
P-Channel @ 25°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 9.7°C/W
P-Channel @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 14.5°C/W
N-Channel @ 25°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 9.7°C/W
N-Channel @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 14.5°C/W
Parameter
Test Conditions 4
Min.
MSK3004
Typ.
Max.
Units
Drain-Source Breakdown Voltage
VGS=0 ID=0.25mA (All Transistors)
55
-
-
V
Drain-Source Leakage Current
VDS=55V VGS=0V (Q1,Q4)
VDS=-55V VGS=0V (Q2,Q3)
-
-
25
μA
-
-
-25
μA
Gate-Source Leakage Current
VGS=±20V VDS=0 (All Transistors)
-
-
±100
nA
Gate-Source Threshold Voltage
VDS=VGS ID=250μA (Q1,Q4)
VDS=VGS ID=250μA (Q2,Q3)
2.0
-
4.5
V
-2.0
-
-4.5
V
Drain-Source On Resistance 2
VGS=10V ID=10A (Q1,Q4)
VGS=-10V ID=-7.2A (Q2,Q3)
-
-
0.15
Ω
-
-
0.28
Ω
Drain-Source On Resistance 3
VGS=10V ID=10A (Q1,Q4)
VGS=10V ID=-7.2A (Q2,Q3)
-
-
0.07
Ω
-
-
0.175
Ω
Forward Transconductance 1
VDS=25V ID=10A (Q1,Q4)
VDS=-25V ID=-7.2A (Q2,Q3)
4.5
-
2.5
-
-
S
-
S
N-Channel (Q1,Q4)
Total Gate Charge 1
ID=10A
-
-
20
nC
Gate-Source Charge ¹
VDS=44V
-
-
5.3
nC
Gate-Drain Charge 1
VGS=10V
-
-
7.6
nC
Turn-On Delay Time 1
VDD=28V
-
4.9
-
nS
Rise Time 1
ID=10A
-
34
-
nS
Turn-Off Delay Time 1
RG=24Ω
-
19
-
nS
Fall Time 1
RD=2.6Ω
-
27
-
nS
Input Capacitance 1
VGS=0V
-
370
-
pF
Output Capacitance 1
VDS=25V
-
140
-
pF
Reverse Transfer Capacitance 1
f=1MHz
-
65
-
pF
P-CHANNEL (Q2,Q3)
Total Gate Charge 1
ID=-7.2A
-
-
19
nC
Gate-Source Charge 1
VDS=-44V
-
-
5.1
nC
Gate-Drain Charge 1
VGS=-10V
-
-
10
nC
Turn-On Delay Time 1
VDD=-28V
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13
-
nS
Rise Time 1
ID=-7.2A
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55
-
nS
Turn-Off Delay Time 1
RG=24Ω
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23
-
nS
Fall Time 1
RD=3.7Ω
-
37
-
nS
Input Capacitance 1
VGS=0V
-
350
-
pF
Output Capacitance 1
VDS=-25V
-
170
-
pF
Reverse Transfer Capacitance 1
f=1MHz
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92
-
pF
BODY DIODE
Forward On Voltage 1
IS=10A VGS=0V (Q1,Q4)
IS=-7.2A VGS=0V (Q2,Q3)
-
1.3
-
V
-
-1.6
-
V
Reverse Recovery Time 1
IS=10A di/dt=100A/μS (Q1,Q4)
IS=-7.2A di/dt=100A/μS (Q2,Q3)
-
56
83
nS
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47
71
nS
Reverse Recovery Charge 1
NOTES:
IS=10A di/dt=100A/μS (Q1,Q4)
IS=-7.2A di/dt=100A/μS (Q2,Q3)
-
0.12
0.18
μC
-
0.084
0.13
μC
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA=25°C unless otherwise specified.
5 Internal solder reflow temperature is 180°C, do not exceed.
2
8548-144 Rev. J 11/14