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MSK186_15 Datasheet, PDF (2/7 Pages) M.S. Kennedy Corporation – Space Efficient Dual Amplifier
ABSOLUTE MAXIMUM RATINGS 7
VCC Total Supply Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 60V
±IOUT Peak Output Current (within S.O.A.) ○ ○ ○ ○ ○ ○10A
VIND Input Voltage ○ ○ ○ ○ (-VCC)-0.5V to (+VCC)+0.5V
VCM Input Voltage ○ ○ ○ ○ ○ ○ (-VCC)-0.1V to (+VCC)-3V
TJ Junction Temperature ○ ○ ○ ○ ○ ○ Internal Protection
(See Application Note)
ELECTRICAL SPECIFICATIONS
TST
Storage
Temperature
Range
8
○
○
○ -65°C to +150°C
TLD Lead Temperature Range
(10 seconds) 300°C ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
TC Case Operating Temperature
MSK186H ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○-55°C to +125°C
MSK186 -25°C to +85°C ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
RTH Thermal Resistance (Per Amplifier)
Junction to Case @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ 1.2°C/W
Parameter
Test Conditions 1 2
Group A
MSK186H
MSK186
Subgroup Min. Typ. Max. Min. Typ. Max. Units
STATIC
Supply Voltage Range 3
-VCC to +VCC
-
8
-
60 8
-
60
V
Quiescent Current (Per Amp)
VIN=0V
1
-
±26 ±35 -
±26 ±38 mA
2,3
-
±26 ±38 -
-
-
mA
Quiescent Current (Per Amp) Overcurrent or TempShutdown Mode VIN=0V
-
-
±6
-
-
±6
-
mA
INPUT
Input Offset Voltage
VIN=0V
Input Offset Voltage Drift
VIN=0V
Input Bias Current 3
VIN=0V
Input Offset Current 3
VIN=OV
Input Impedance
f=DC Differential
Input Capacitance
f=DC Differential
Common Mode Rejection Ratio 3 (-VCC)-0.1≤ VIN ≤ (+VCC)-3V
Input Voltage Noise Density
f=1KHZ
OUTPUT
1
-
±1 ±7.5 -
±1 ±10 mV
-
-
±20
-
- ±20
- μV/°C
1
- ±100 ±500 - ±100 ±750 nA
1
±1 ±5 ±50 -
±5 ±75 nA
-
-
10 7
-
-
10 7
-
Ω
-
-
6
-
-
6
-
pF
1
80
95
-
75
95
-
dB
-
-
70
-
-
70
- nV/√HZ
Output Voltage Swing
Output Current 3
IOUT=2.0A 3
IOUT=8.0A
Continuous
4 ±26.5 ±27.5 - ±26.5 ±27.5 -
V
4
±25 ±26 - ±25 ±26
-
V
4
±8
-
- ±8
-
-
A
Enable/
Shutdown Input 3
VE/S High- Output Enabled E/S Open or High
VE/S Low- Output Disabled E/S Forced Low
IE/S High- Output Enabled E/S Indicates High
4 VR+2.4 -
- VR+2.4 -
-
V
4
-
- VR+0.8 -
- VR+0.8 V
-
-
-50
-
-
-50
-
μA
Output Disable Time
IE/S Low- Output Disabled E/S Indicates Low
-
-
-55
-
-
-55
-
μA
-
-
1
-
-
1
-
μS
Output Enable Time
-
-
3
-
-
3
-
μS
TRANSFER CHARACTERISTICS
Slew Rate
Open Loop Voltage Gain 3
Settling Time ±0.1% 3
AV=1 VOUT= 50Vp-p RL=4Ω
VOUT=±25V RL=1KΩ
AV=-10 50V Step
-
-
9
-
-
9
-
V/μS
4
100 110
- 100 110
-
dB
-
-
20
-
-
20
-
μS
NOTES:
1 Unless otherwise specified ±VCC= ±30VDC, VR=0V and E/S Pin is open.
2 All electrical specifications apply to each amplifier.
3 Devices shall be capable of meeting the parameter, but need not to be tested. Typical parameters are for reference only.
4 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
5 Military grade devices ('H' suffix) shall be 100% tested to subgroups 1,2,3 and 4.
6 Subgroup 1,4 TA=TC=+25°C
Subgroup 2 TA=TC=+125°C
Subgroup 3 TA=TC=-55°C
7 Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
8 Internal solder reflow temperature is 180°C, do not exceed.
2
8548-141 Rev. C 10/14