5046RH Datasheet, PDF (2/10 Pages) M.S. Kennedy Corporation – RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS

ABSOLUTE MAXIMUM RATINGS ¹²
Input Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -0.3V, +20V
VBIAS Voltage ○
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-0.3V, 18V
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Enable -0.3V, VBIAS ○
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Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 5.0 Amps
Thermal Resistance MOSFET(@ 125°C) 6.0°C/W
Diode(@ 125°C) ○ ○ 7.5°C/W
ELECTRICAL SPECIFICATIONS
TST
Storage Temperature Range ○
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-65°C to +150°C
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TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 300°C
(10 Seconds)
TC Case Operating Temperature
MSK5046RH K/H/E Series ○ ○ ○ ○ ○ -55°C to +125°C
MSK5046RH Series ○
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-40°C to +85°C
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TJ
Junction Temperature ○
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+150°C
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NOTES:
1 VIN=12V, VBIAS=12V, IOUT=4.0A, RSENSE=15mΩ, COUT=3x100µF Low ESR tantalum (AVX P/N TAZH107M015L) + 1.0µF ceramic,
SOFT START=NC, ENABLE=NC, ADJUST=NC, unless otherwise specified.
2 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
3 All output parameters are tested using a low duty cycle pulse to maintain TJ = TC.
4 Industrial grade and 'E' suffix devices shall be tested to subgroup 1 unless otherwise specified.
5 Military grade devices ('H' and 'K' suffix) shall be 100% tested to subgroups 1,2,3,4 and 7.
6 Subgroup 1,4,7 TA=TC=+25°C
Subgroup 2
TA=TC=+125°C
Subgroup 3
TA=TC=-55°C
7 The device can operate with input voltages as high as 18V, but efficiency is best at lower inputs.
8 With VBIAS connected to a separate source, VIN Min. is VOUT + VDROPOUT; see typical dropout curves.
9 Contact factory for post radiation limits.
10 Sense resistor losses and VBIAS power not included. See typical performance curves.
11 The disabled bias current is the sum of the enable pin sink current (approximately VBIAS/10KΩ) and the internal bias current.
12 Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
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PRELIMINARY Rev. G 2/06