MSK4105_15 Datasheet, PDF (1/6 Pages) M.S. Kennedy Corporation – Operational From -55C to 190C

MIL-PRF-38534 & 38535 CERTIFIED FACILITY
HIGH TEMPERATURE
600V/10A HERMETIC
HALF BRIDGE
4105
FEATURES:
Operational From -55°C to 190°C
Half Bridge Configuration
Silicon Carbide Power MOSFETS
Silicon Carbide Recovery Diodes
600V Rated Voltage
20A Continuous Output Current at Tc=25°C
10A Continuous Output Current at Tc=190°C
Available in Three Lead Bend Configurations
Package Isolated for High Voltage Isolation
Contact MSK for MIL-PRF-38534 Qualification Status
DESCRIPTION:
The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with
parallel SiC recovery diodes. The hermetic design makes it ideal for use in oil/gas/down-hole, aerospace and other extreme
environment applications. The MSK4105 is capable of 10 amps of continuous output current at Tc=190°C. The 600V rating
makes the MSK4105 ideal for high bus voltage applications. The package is electrically isolated which allows direct heat
sinking and provides good thermal conductivity. The package is a space efficient 18 pin power package with three lead form
configurations option available.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Aeronautics & Aerospace
Down-Hole
Extreme Environments
PIN-OUT INFORMATION
1 G1 RTN
2 G1
3 NC
4 NC
5 G2 RTN
6 G2
7 NC
8 NC
9 NC
10 S2
11 S2
12 S2
13 S1/D2
14 S1/D2
15 S1/D2
16 D1
17 D1
18 D1
1
8548-132 Rev. B 2/15